Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure
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چکیده
منابع مشابه
P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas
The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a d...
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a Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia b Department of Physics, University of Central Florida, Orlando, FL 32816-2385, USA c Graduate Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan 333, Taiwan d Institute of Electro-Optical Engineering, Green Technology Research Center, Chang Gung University, T...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2017
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4980140